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authorPeter Griffin <[email protected]>2025-06-19 11:18:16 +0000
committerKrzysztof Kozlowski <[email protected]>2025-06-25 14:17:05 +0000
commit2642f55d44ce563f227dd9c620eda0dec8d882be (patch)
treeede04401da4935fcf28deabcddb4922abe1986ff /rust/macros/paste.rs
parentpinctrl: samsung: rename exynosautov920_retention_data to no_retention_data (diff)
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pinctrl: samsung: add support for gs101 wakeup mask programming
gs101 differs to other currently supported SoCs in that it has 3 wakeup mask registers for the 67 external wakeup interrupt pins in alive and far_alive. EINT_WAKEUP_MASK 0x3A80 EINT[31:0] EINT_WAKEUP_MASK2 0x3A84 EINT[63:32] EINT_WAKEUP_MASK3 0x3A88 EINT[66:64] Add gs101 specific callbacks and a dedicated gs101_wkup_irq_chip struct to handle these differences. The current wakeup mask with upstream is programmed as WAKEUP_MASK0[0x3A80] value[0xFFFFFFFF] WAKEUP_MASK1[0x3A84] value[0xF2FFEFFF] WAKEUP_MASK2[0x3A88] value[0xFFFFFFFF] Which corresponds to the following wakeup sources: gpa7-3 vol down gpa8-1 vol up gpa10-1 power gpa8-2 typec-int Signed-off-by: Peter Griffin <[email protected]> Link: https://lore.kernel.org/r/[email protected] Signed-off-by: Krzysztof Kozlowski <[email protected]>
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